3BHB013085R0001 5SHY3545L0009 Product datasheet
Model number: |
3BHB013085R0001 5SHY3545L0009 |
|
Module Type: |
IGCT Module |
Manufacture: |
ABB |
|
Condition: |
Brand New |
Range of Product: |
Advant OCS/800xA |
|
Lead time: |
In Stock |
Weight: |
2.66 kg |
|
HS CODE: |
8537101190 |
Dimension: |
35x29x6cm |
|
MOQ: |
1 |
Product Origin: |
SWEDEN |
|
System: |
DCS |
Discontinued on: |
Active |
|
Communication Service: |
Ethernet router |
3BHB013085R0001 5SHY3545L0009 Functional Description
If you have other request contact our team to get customized service
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YPP109A YT204001-HS |
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YPC104B YT204001-BT |
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GDC806B01 3BHE036290R0001 |
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YPN107A YT204001-DM |
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FENA-21 3AUA0000089108 |
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HAC807B102 3BHE039221R0102 |
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IDS-DTU51 |
ABB |
XZC827A102 3BHE038368R0102 |
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GDC806C4002 3BHE044249R4002 |
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YPP109A YT204001-DL/YPN106A YT204001-BD |
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XVC772A102 3BHE032285R0102 |
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3BHB003386R0101 5SXE05-0153 |
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3BHE044481R0101 |
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GCC960C103 3BHE033067R0103 |
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IMASI02 |
ABB |
FENA-21 |
ABB |
GCC960C102 3BHE033067R0102 |
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IIMSM01 |
ABB |
216NG62A HESG441634R1 |
ABB |
XZC825A102 3BHE036346R0102 |
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IIMCL01 |
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YPQ101E YT204001-FS |
ABB |
GDC806C0003 3BHE044249R0003 |
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IEPAF02 |
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YPK107E 3ASD489301A410 |
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XZC826A102 3BHE036348R0102 |
ABB |
IEMMU11 |
ABB |
YPK107E YT204001-FY |
ABB |
GDC806A2002 3BHE028761R2002 |
ABB |
086351-004 |
Innovative IGCT Technology for High-Power Applications
The Integrated Gate-Commutated Thyristor (IGCT) was developed through a systematic engineering approach to overcome traditional GTO limitations, achieving breakthrough performance in high-power electronics. Key development objectives focused on eliminating dv/dt snubber requirements while operating at high current densities, accomplished through optimized silicon wafer thinning that simultaneously reduced both on-state and turn-off losses. Engineers significantly minimized gate drive demands during conduction phases while developing innovative anti-parallel diodes capable of snubberless high di/dt operation. The IGCT platform integrates both main switches (GTO thyristor and diode) in a single semiconductor package, enabling high-frequency performance under continuous and dynamic conditions. For utility-scale applications, the technology delivers enhanced reliability per MVA by simplifying system architecture and reducing component count. The design's modularity allows economical scaling to several hundred MVA through robust series/parallel configurations, making IGCTs ideal for HVDC transmission, industrial drives, and renewable energy conversion. These advancements establish IGCTs as the preferred solution for medium-voltage applications requiring unmatched power density, efficiency, and operational reliability in the 2.3-6.9kV range.