3BHE023784R0001 5SHY3545L0014 Product datasheet
Model number: |
3BHE023784R0001 5SHY3545L0014 |
|
Module Type: |
IGCT Module |
Manufacture: |
ABB |
|
Condition: |
Brand New |
Range of Product: |
Advant OCS/800xA |
|
Lead time: |
In Stock |
Weight: |
2.66 kg |
|
HS CODE: |
8537101190 |
Dimension: |
35x29x6cm |
|
MOQ: |
1 |
Product Origin: |
SWEDEN |
|
System: |
DCS |
Discontinued on: |
Active |
|
Communication Service: |
Ethernet router |
3BHE023784R0001 5SHY3545L0014 Functional Description
If you have other request contact our team to get customized service
ABB |
YPP109A YT204001-HS |
ABB |
YPC104B YT204001-BT |
ABB |
GDC806B01 3BHE036290R0001 |
ABB |
YPN107A YT204001-DM |
ABB |
FENA-21 3AUA0000089108 |
ABB |
HAC807B102 3BHE039221R0102 |
ABB |
IDS-DTU51 |
ABB |
XZC827A102 3BHE038368R0102 |
ABB |
GDC806C4002 3BHE044249R4002 |
ABB |
YPP109A YT204001-DL/YPN106A YT204001-BD |
ABB |
XVC772A102 3BHE032285R0102 |
ABB |
3BHB003386R0101 5SXE05-0153 |
ABB |
3BHE044481R0101 |
ABB |
GCC960C103 3BHE033067R0103 |
ABB |
IMASI02 |
ABB |
FENA-21 |
ABB |
GCC960C102 3BHE033067R0102 |
ABB |
IIMSM01 |
ABB |
216NG62A HESG441634R1 |
ABB |
XZC825A102 3BHE036346R0102 |
ABB |
IIMCL01 |
ABB |
YPQ101E YT204001-FS |
ABB |
GDC806C0003 3BHE044249R0003 |
ABB |
IEPAF02 |
ABB |
YPK107E 3ASD489301A410 |
ABB |
XZC826A102 3BHE036348R0102 |
ABB |
IEMMU11 |
ABB |
YPK107E YT204001-FY |
ABB |
GDC806A2002 3BHE028761R2002 |
ABB |
086351-004 |
Development Goals of IGCT Technology
The IGCT development program aimed to enhance GTO performance by adopting a step-by-step approach similar to IGBT development. Key objectives included improving GTO switching characteristics for snubberless high-current-density operation, minimizing silicon thickness to reduce on-state and turn-off losses, and lowering gate-drive demands during conduction. Additionally, the program focused on designing anti-parallel diodes capable of high di/dt snubberless turn-off, enabling high-frequency operation under continuous and dynamic conditions, and integrating GTO thyristors and diodes into a single semiconductor package. For high-power applications, further goals were prioritized, such as increasing reliability per MVA by simplifying system complexity, reducing component count, and expanding the power range to several hundred MVA through cost-effective and reliable series and parallel configurations. These advancements collectively aimed to optimize efficiency, reliability, and scalability for high-power electronic systems.