ABB 3BHE023784R0001 5SHY3545L0014 IGCT Module

ABB 3BHE023784R0001 5SHY3545L0014
ABB 3BHE023784R0001 5SHY3545L0014
ABB 3BHE023784R0001 5SHY3545L0014

3BHE023784R0001 5SHY3545L0014 Product datasheet 

Model number:

3BHE023784R0001 5SHY3545L0014

 

Module Type:

IGCT Module

Manufacture:

ABB 

 

Condition:

Brand New

Range of Product:

Advant OCS/800xA

 

Lead time:

In Stock

Weight:

2.66 kg

 

HS CODE:

8537101190

Dimension:

35x29x6cm

 

MOQ:

1

Product Origin:

SWEDEN

 

System:

DCS

Discontinued on:

Active

 

Communication Service:

Ethernet router

 

3BHE023784R0001 5SHY3545L0014 Functional Description 


The 3BHE023784R0001 Control System ABB represents ABB's cutting-edge IGCT technology, combining IGBT's fast switching with GTO's high-voltage capability in a single power semiconductor module. Designed for ACS6000 active rectifier units, this Swedish-engineered component features 4500V blocking voltage and 3500A average current capacity. It utilizes fiber-optic triggering and integrates with renewal diodes in phase modules, delivering superior performance for medium-voltage drive applications. Its compact 35×29×6cm press-pack design (2.66kg) ensures optimal thermal management in demanding industrial environments.

 

Engineered for precision power control, the Controllable Rectifier Electronic Components 3BHE023784R0001 achieves rapid switching transitions (<5μs turn-on, <10μs turn-off) while supporting frequencies up to 500Hz. The module operates with 1.5-2.5V gate trigger voltage and maintains stability across a wide -40°C to +125°C junction temperature range. These specifications make the ABB 3BHE023784R0001 5SHY3545L0014 IGCT Module particularly effective in high-power conversion systems where efficiency and reliability are paramount. Its integrated design eliminates the need for external snubber circuits while reducing conduction losses.

 

The Power Semiconductor Switching Device 5SHY3545L0014 works in conjunction with dedicated gate supply units (GUSP) and clamping capacitors to form complete phase modules. Its press-pack configuration provides excellent mechanical stability under vibration and thermal cycling conditions. The module's copper-baseplate design enhances heat dissipation, while the fiber-optic interface ensures noise-immune signal transmission. These features make it ideal for integration into complex power electronic systems requiring precise control and monitoring.

 

Widely used in industrial drives, renewable energy systems, and power transmission applications, the IGCT Module 5SHY3545L0014 ABB ships globally from Xiamen, China with complete documentation. Its combination of high power density, fast switching capability, and robust construction addresses the needs of modern medium-voltage applications from 2.3kV to 6.9kV. ABB's quality assurance and technical support ensure reliable operation throughout the product lifecycle, with storage capability maintained from -40°C to +140°C when not in active service.

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Development Goals of IGCT Technology


The IGCT development program aimed to enhance GTO performance by adopting a step-by-step approach similar to IGBT development. Key objectives included improving GTO switching characteristics for snubberless high-current-density operation, minimizing silicon thickness to reduce on-state and turn-off losses, and lowering gate-drive demands during conduction. Additionally, the program focused on designing anti-parallel diodes capable of high di/dt snubberless turn-off, enabling high-frequency operation under continuous and dynamic conditions, and integrating GTO thyristors and diodes into a single semiconductor package. For high-power applications, further goals were prioritized, such as increasing reliability per MVA by simplifying system complexity, reducing component count, and expanding the power range to several hundred MVA through cost-effective and reliable series and parallel configurations. These advancements collectively aimed to optimize efficiency, reliability, and scalability for high-power electronic systems.

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