3BHE009681R0101 GVC750BE101 3BHB013088R0001 5SHY3545L0010 Product datasheet
|
Model number: |
3BHE009681R0101 GVC750BE101 3BHB013088R0001 5SHY3545L0010 |
|
Module Type: |
IGCT Module |
|
Manufacture: |
ABB |
|
Condition: |
Brand New |
|
Range of Product: |
ABB |
|
Lead time: |
In Stock |
|
Weight: |
1.22 kg |
|
HS CODE: |
8537101190 |
|
Dimension: |
24x19x5.3cm |
|
MOQ: |
1 |
|
Product Origin: |
SWEDEN |
|
System: |
DCS |
|
Discontinued on: |
Active |
|
Communication Service: |
Ethernet router |
3BHE009681R0101 GVC750BE101 3BHB013088R0001 5SHY3545L0010 Functional Description
If you have other request contact our team to get customized service



Call +86 18159889985 to be connected with our Manager Stella
Email to sales6@apterpower.com get your best quotation
For the quick assistance message us on WhatsApp at +86 18159889985 now!
|
ABB |
3BDS008790R09 |
ABB |
2050RZ23002B |
ABB |
087629-001 |
|
ABB |
3BDH000311R0101 PL810 |
ABB |
2012AZ10101B |
ABB |
086444-005 |
|
ABB |
3AXD50000032633 E152A03EIOA |
ABB |
200-IP2 200IP2 |
ABB |
08644-005 |
|
ABB |
3AFE64547992 |
ABB |
200-CICN 200-CIE |
ABB |
07ZE63R302 |
|
ABB |
35AE92A |
ABB |
1TGE102009R4800 |
ABB |
3BHB000272R0001 UFC719AE01 |
|
ABB |
35AA92C GJR5143000R0002 |
ABB |
1SBP260102R1001 XC08L1 |
ABB |
3BHB000528R0100 TV742 |
|
ABB |
216VE61B HESG324258R11 HESG324257/E |
ABB |
1SAR330020R0000 |
ABB |
3BHB000652R0001 KUC720AE01 |
|
ABB |
216EB61 HESG324295R11 HESG324285/C |
ABB |
1948024G1 |
ABB |
3BHB002481R0001 USC329 AE01 |
|
ABB |
216DB61 HESG324063R100 HESG216882/A |
ABB |
1948022A1 |
ABB |
3BHB003041R0101 UFC719AE01 |
|
ABB |
216AB61 HESG324013R100 HESG216881/A |
ABB |
1948021A1 |
ABB |
3BHB003688R0101 |
Characteristics of the IGCT
The characteristics targeted in the IGCT development programme were achieved in steps that closely resembled the approach adopted for the IGBT. The development goals were:
• Improved GTO switching characteristics for operation without dv/dt snubbering at high current density
• Reduced on-state and turn-off losses through minimization of the silicon thickness
• Reduced gate-drive requirements, especially during conduction
• Development of anti-parallel diodes capable of snubberless turn-off at high di/dt
• High-frequency operation for continuous and dynamic conditions
• Integration of main switches (GTO thyristor and diode) in one semiconductor package
For high-power applications some additional characteristics were necessary:
• Enhanced reliability per MVA by reducing the complexity and number of components
• Extension of the power range to several 100 MVA by means of cost-effective, reliable series and parallel connection
Tags :